Control of bulk superconductivity in a BCS superconductor by surface charge doping via electrochemical gating

Abstract

The electrochemical gating technique is a powerful tool to tune the \textit{surface} electronic conduction properties of various materials by means of pure charge doping, but its efficiency is thought to be hampered in materials with a good electronic screening. We show that, if applied to a metallic superconductor (NbN thin films), this approach allows observing reversible enhancements or suppressions of the \emph{bulk} superconducting transition temperature, which vary with the thickness of the films. These results are interpreted in terms of proximity effect, and indicate that the effective screening length depends on the induced charge density, becoming much larger than that predicted by standard screening theory at very high electric fields.

9 pages, 8 color figures (including Supplemental Material)

References in corpus (8)

• Controlling many-body states by the electric-field effect in a two-dimensional material
• Superconducting properties and Hall Effect of epitaxial NbN thin films
• Gate tuning of electronic phase transitions in two-dimensional NbSe${}_2$
• Electrostatically Induced Superconductivity at the Surface of WS${}_2$
• A high-mobility electronic system at an electrolyte-gated oxide surface
• Ionic liquid gating of ultra-thinYBa${}_2$Cu${}_3$O${}_{7-x}$ films
• Electrical Modulation of Superconducting Critical Temperature in Liquid-Gated Thin Niobium Films
• Superconducting Transition Temperature Modulation in NbN via EDL Gating

Cited by in corpus (26)

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• Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors
• Sauter-Schwinger effect in a Bardeen-Cooper-Schrieffer superconductor
• Proximity Eliashberg theory of electrostatic field-effect-doping in superconducting films
• Spectroscopic Signatures of Gate-Controlled Superconducting Phases
• Strong dopant dependence of electric transport in ion-gated MoS2
• Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers
• Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films
• Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films
• Anomalous screening of an electrostatic field at the surface of niobium nitride
• Ionic gating in metallic superconductors: A brief review
• Orientation-dependent electric transport and band filling in hole co-doped epitaxial diamond films
• Two-dimensional hole transport in ion-gated diamond surfaces: A brief review
• Microscopic theory of supercurrent suppression by gate-controlled surface depairing
• Electric field exfoliation and high-T${}_{\text{C}}$ superconductivity in field-effect hole-doped hydrogenated diamond (111)
• Theoretical explanation of electric field-induced superconductive critical temperature shifts in Indium thin films
• Migdal-Eliashberg theory of multi-band high-temperature superconductivity in field-effect-doped hydrogenated (111) diamond
• Anomalous metallic phase in molybdenum disulphide induced via gate-driven organic ion intercalation
• Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels
• Quantum confinement theory of ultra-thin films: electronic, thermal and superconducting properties
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer
• Microscopic mechanism of electric field-induced superconductivity suppression in metallic thin films
• Facile synthesis of palladium hydride via ionic gate-driven protonation using a deep eutectic solvent