Proximity Eliashberg theory of electrostatic field-effect-doping in superconducting films

Abstract

We calculate the effect of a static electric field on the critical temperature of a s-wave one band superconductor in the framework of proximity effect Eliashberg theory. In the weak electrostatic field limit the theory has no free parameters while, in general, the only free parameter is the thickness of the surface layer where the electric field acts. We conclude that the best situation for increasing the critical temperature is to have a very thin film of a superconducting material with a strong increase of electron-phonon (boson) constant upon charging.

arXiv comment9 pages, 5 figures

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• Ionic gating in metallic superconductors: A brief review
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• Theoretical explanation of electric field-induced superconductive critical temperature shifts in Indium thin films
• Phase slips dynamics in gated Ti and V all-metallic supercurrent nano-transistors: a review
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer
• Superconductive critical temperature of Pb/Ag heterostructures
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• Turning non-superconducting elements into superconductors by quantum confinement and proximity