Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric

Abstract

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6 K for the optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier doping in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions.

arXiv comment6 pages, 4 figure. Supplementary information is not included

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• Electric-Field Induced Superconductor-Insulator Transitions in Exfoliated Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+\delta }$ Flakes
• Discrete superconducting phases in FeSe-derived superconductors
• Exploring Topological Superconductivity in Topological Materials
• Protonation induced high-Tc phases in iron-based superconductors evidenced by NMR and magnetization measurements
• Tailoring Dzyaloshinskii-Moriya interaction in a transition metal dichalcogenide by dual-intercalation
• Suppression of superconductivity and enhanced critical field anisotropy in thin flakes of FeSe
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• Superconductivity in Li-intercalated 1T-SnSe2 driven by electric-field gating
• Protonation-induced discrete superconducting phases in bulk FeSe single crystals
• Ionic-liquid-gating induced protonation and superconductivity in FeSe, FeSe0.93S0.07, ZrNCl, 1T-TaS2, and Bi2Se3
• Tuning electronic properties of FeSe${}_{0.5}$Te${}_{0.5}$ thin flakes by a novel field effect transistor
• Recent advances in high-throughput superconductivity research
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• Gate control of superconducting current: Mechanisms, parameters and technological potential
• Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films
• Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene
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• Structural and electronic phase transitions driven by electric field in metastable MoS${}_2$ thin flake
• Evidence for an Additional Symmetry Breaking from Direct Observation of Band Splitting in the Nematic State of FeSe Superconductor
• Ionic liquid gating induced two superconductor-insulator phase transitions in spinel oxide Li${}_{1\pm x}$Ti${}_2$O${}_{4-\delta }$
• Tomonaga Luttinger liquid in the topological edge channel of multilayer FeSe
• Spin-Dependent High-Order Topological Insulator and Two Types of Distinct Corner Modes in Monolayer FeSe/GdClO Heterostructure
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer
• Ferromagnetic inter-layer coupling in FeSe${}_{1-x}$S${}_x$ superconductors revealed by inelastic neutron scattering
• Superconducting gap and its Little-Parks like oscillations with high-order harmonics in lithium intercalated 1T-TiSe${}_2$
• Electric-field controlled superconductor-ferromagnetic insulator transition
• Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices
• Fragile pressure-induced magnetism in FeSe superconductors with a thickness reduction
• What controls the superconducting dome of electron-doped FeSe?