Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices

Abstract

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, we demonstrate the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.

14 pages, 4 figures

References in corpus (21)

• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
• Double layer in ionic liquids: Overscreening vs. crowding
• Tunable Phase Boundaries and Ultra-Strong Coupling Superconductivity in Mirror Symmetric Magic-Angle Trilayer Graphene
• Electric Field Tunable Correlated States and Magnetic Phase Transitions in Twisted Bilayer-Bilayer Graphene
• Superconductivity protected by spin-valley locking in ion-gated MoS2
• Measurement of mobility in dual-gated MoS2 transistors
• Controlling many-body states by the electric-field effect in a two-dimensional material
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Band Structure Engineering of 2D Materials using Patterned Dielectric Superlattices
• Gate tuning of electronic phase transitions in two-dimensional NbSe${}_2$
• Electrostatically Induced Superconductivity at the Surface of WS${}_2$
• Fractional quantum anomalous Hall states in twisted bilayer MoTe${}_2$ and WSe${}_2$
• A full superconducting dome of strong Ising protection in gated monolayer WS2
• Gate-Induced Interfacial Superconductivity in 1T-SnSe2
• Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric
• Multi-Valley Superconductivity In Ion-Gated MoS2 Layers
• Electric-Field Induced Superconductor-Insulator Transitions in Exfoliated Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+\delta }$ Flakes
• Quenching the band gap of 2D semiconductors with a perpendicular electric field
• Engineering high quality graphene superlattices via ion milled ultra-thin etching masks
• Generation of isolated flat bands with tunable numbers through Moiré engineering