Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2
arXiv:1802.08449 · doi:10.1016/j.apsusc.2018.05.232
Abstract
We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS. We encapsulate the flake by AlO, leaving the device channel exposed at the edges only. A stable Li intercalation in the MoS lattice is induced by gating the samples with a Li-based polymeric electrolyte above 330 K and the doping state is fixed by quenching the device to 300 K. This intercalation process induces the emergence of anomalies in the temperature dependence of the sheet resistance and its first derivative, which are typically associated with structural/electronic/magnetic phase transitions. We suggest that these anomalies in the resistivity of MoS can be naturally interpreted as the signature of a transition to a charge-density-wave phase induced by lithiation, in accordance with recent theoretical calculations.
arXiv comment8 pages, 4 figures
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