Inducing ferromagnetism and Kondo effect in platinum by paramagnetic ionic gating

Abstract

Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible electrical switching of ferromagnetic (FM) states in platinum (Pt) thin films by introducing paramagnetic ionic liquid (PIL) as the gating media. The paramagnetic ionic gating controls the movement of ions with magnetic moments, which induces itinerant ferromagnetism on the surface of Pt films with large coercivity and perpendicular anisotropy mimicking the ideal two-dimensional Ising-type FM state. The electrical transport of the induced FM state shows Kondo effect at low temperature suggesting spatially separated coexistence of Kondo scattering beneath the FM interface. The tunable FM state indicates that paramagnetic ionic gating could serve as a versatile method to induce rich transport phenomena combining field effect and magnetism at PIL-gated interfaces.

arXiv comment17 pages, 4 figures

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• Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface
• Quartic asymmetric exchange for two-dimensional ferromagnets with trigonal prismatic symmetry
• In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr
• Significant Unconventional Anomalous Hall Effect in Heavy Metal/Antiferromagnetic Insulator Heterostructures
• Experimental Observation of a Magnetic Interfacial Effect
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer
• Appearance of ferromagnetism in Pt(100) ultrathin films originated from quantum-well states
• Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures
• Experimental evidence of hidden spin polarization in silicon by using strain gradient