Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface

Abstract

We report an electric field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

arXiv comment13 pages, 5 figures

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Cited by in corpus (6)

• Paramagnetic spin Hall magnetoresistance
• Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt
• Electrical control of spin mixing conductance in a Y${}_3$Fe${}_5$O${}_{12}$/Platinum bilayer
• Spin Hall magnetoresistance in paramagnetic NdGaO3
• Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High-$\kappa$ Dielectric Layer
• Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy