Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt
arXiv:1901.09986 · doi:10.1063/1.5090098
Abstract
The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets.
arXiv comment5 pages, 4 figures
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- Nonlinear longitudinal and transverse magnetoresistances due to current-induced magnon creation-annihilation processes
- Spin Hall magnetoresistance in paramagnetic NdGaO3
- Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices
- Spin Hall magnetoresistance at the altermagnetic insulator/Pt interface