5 papers
Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices
Pavan Nukala, Majid Ahmadi, Yingfen Wei +5
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact na…
Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
Pavan Nukala, Yingfen Wei, Vincent de Haas +3
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar…
Magneto-ionic control of spin polarization in magnetic tunnel junctions
Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…
Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon
Pavan Nukala, Jordi Antoja-Lleonart, Yingfen Wei +3
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si…
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…