593 citations · 848 across the 8 of their papers we have counts for
8 papers
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric -based Capacitors Through Operando Nanobeam X-ray Diffraction
Evgenios Stylianidis, Pranav Surabhi, Ruben Hamming-Green +13
Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, th…
Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices
Pavan Nukala, Majid Ahmadi, Yingfen Wei +5
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact na…
Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films
Pavan Nukala, Yingfen Wei, Vincent de Haas +3
The unconventional Si-compatible ferroelectricity in hafnia-based systems, which becomes robust only at nanoscopic sizes, has attracted a lot of interest. While a metastable polar…
Magneto-ionic control of spin polarization in magnetic tunnel junctions
Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…
Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon
Pavan Nukala, Jordi Antoja-Lleonart, Yingfen Wei +3
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si…
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…
A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Yingfen Wei, Pavan Nukala, Mart Salverda +10
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appea…
Transition of defect patterns from 2D to 3D in liquid crystals
Yang Qu, Ying Wei, Pingwen Zhang
Defects arise when nematic liquid crystals are under topological constraints at the boundary. Recently the study of defects has drawn a lot of attention. In this paper, we investig…