593 citations · 848 across the 8 of their papers we have counts for
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Magneto-ionic control of spin polarization in magnetic tunnel junctions
Yingfen Wei, Sylvia Matzen, Cynthia P. Quinteros +4
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), display…
Direct epitaxial growth of polar (1-x)HfO2-(x)ZrO2 ultra-thin films on Silicon
Pavan Nukala, Jordi Antoja-Lleonart, Yingfen Wei +3
Ultra-thin Hf1-xZrxO2 films have attracted tremendous interest owing to their Si-compatible ferroelectricity arising from polar polymorphs. While these phases have been grown on Si…
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers
Yingfen Wei, Sylvia Matzen, Guillaume Agnus +7
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic device…