317 citations · 2.1k across the 42 of their papers we have counts for
8 papers · 1 filter
First-principles investigation of magnetocrystalline anisotropy oscillations in CoFeAl/Ta heterostructures
Junfeng Qiao, Shouzhong Peng, Youguang Zhang +2
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}F…
Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy
Yu Zhang, Xueying Zhang, Nicolas Vernier +8
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switchi…
Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness
Anni Cao, Xueying Zhang, Bert Koopmans +6
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to s…
Controllable transport of a skyrmion in a ferromagnetic narrow channel with voltage-controlled magnetic anisotropy
Junlin Wang, Jing Xia, Xichao Zhang +5
Magnetic skyrmions have potential applications in next-generation spintronics devices with ultralow energy consumption. In this work, the current-driven skyrmion motion in a narrow…
Direct observation of domain wall surface tension by deflating or inflating a magnetic bubble
Xueying Zhang, Nicolas Vernier, Weisheng Zhao +3
The surface energy of a magnetic Domain Wall (DW) strongly affects its static and dynamic behaviours. However, this effect was seldom directly observed and many related phenomena h…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…
Ultra-fast magnetization manipulation using single femtosecond light and hot-electrons pulse
Y. Xu, M. Deb, G. Malinowski +3
Current induced magnetization manipulation is a key issue for spintronic application. Therefore, deterministic switching of the magnetization at the picoseconds timescale with a si…