317 citations · 2.1k across the 42 of their papers we have counts for
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Amplicification of Voltage Controlled Magnetic Anisotropy Effect with Negative Capacitance
Lang Zeng, Tianqi Gao, Deming Zhang +6
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability…
Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures
Boyu Zhang, Anni Cao, Junfeng Qiao +11
Pt/Co/heavy metal (HM) tri-layered structures with interfacial perpendicular magnetic anisotropy (PMA) are currently under intensive research for several emerging spintronic effect…
Magnetic skyrmion-based synaptic devices
Yangqi Huang, Wang Kang, Xichao Zhang +2
Magnetic skyrmions are promising candidates for next-generation information carriers, owing to their small size, topological stability, and ultralow depinning current density. A wi…
A gate-variable spin current demultiplexer based on graphene
Li Su, Xiaoyang Lin, Youguang Zhang +5
Spintronics, which utilizes spin as information carrier, is a promising solution for nonvolatile memory and low-power computing in the post-Moore era. An important challenge is to…
Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions
Jiaqi Zhou, Weisheng Zhao, Yin Wang +8
It has been reported in experiments that capping layers which enhance the perpendicular magnetic anisotropy (PMA) of magnetic tunnel junctions (MTJs) induce great impact on the tun…
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…
Control and manipulation of a magnetic skyrmionium in nanostructures
Xichao Zhang, Jing Xia, Yan Zhou +4
A magnetic skyrmionium is a nontopological soliton, which has a doughnut-like out-of-plane spin texture in thin films, and can be phenomenologically viewed as a coalition of two to…
Complementary Skyrmion Racetrack Memory with Voltage Manipulation
Wang Kang, Chentian Zheng, Yangqi Huang +4
Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size and extremely low current ne…
Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System
Yue Zhang, Chao Zhang, Jiang Nan +6
Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory i…
Skyrmions as Compact, Robust and Energy-Efficient Interconnects for Domain Wall (DW)-based Systems
Wang Kang, Yangqi Huang, Xichao Zhang +3
Magnetic domain-wall (DW) has been widely investigated for future memory and computing systems. However, energy efficiency and stability become two major challenges of DW-based sys…
Spin-Cherenkov effect in a magnetic nanostrip with interfacial Dzyaloshinskii-Moriya interaction
Jing Xia, Xichao Zhang, Ming Yan +2
Spin-Cherenkov effect enables strong excitations of spin waves (SWs) with nonlinear wave dispersions. The Dzyaloshinskii-Moriya interaction (DMI) results in anisotropy and nonrecip…
A microwave field-driven transistor-like skyrmionic device with the microwave current-assisted skyrmion creation
Jing Xia, Yangqi Huang, Xichao Zhang +5
Magnetic skyrmion is a topologically protected domain-wall structure at nanoscale, which could serve as a basic building block for advanced spintronic devices. Here, we propose a m…