Complementary Skyrmion Racetrack Memory with Voltage Manipulation
arXiv:1602.08799 · doi:10.1109/LED.2016.2574916
Abstract
Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall (DW). However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation and synchronization etc. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.
3 pages, 4 figures
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- Creation,transport and detection of imprinted magnetic solitons stabilized by spin-polarized current
- Controllable transport of a skyrmion in a ferromagnetic narrow channel with voltage-controlled magnetic anisotropy
- The dynamic chirality flips of Skyrmion bubbles
- Robust and programmable logic-in-memory devices exploiting skyrmion confinement and channeling using local energy barriers
- Current-driven motion of magnetic domain-wall skyrmions
- Developing All-Skyrmion Spiking Neural Network
- Magnetic Skyrmions in Condensed Matter Physics