317 citations · 2.1k across the 42 of their papers we have counts for
9 papers · 1 filter
Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution
Zahir Muhammad, Yuliang Li, Sami Ullah +7
Two dimensional layered materials exhibit versatile electronic properties in their different phases. The intrinsic electronic properties of these materials can be modulated through…
First-principles investigation of magnetocrystalline anisotropy oscillations in CoFeAl/Ta heterostructures
Junfeng Qiao, Shouzhong Peng, Youguang Zhang +2
We report first-principles investigations of magnetocrystalline anisotropy energy (MCAE) oscillations as a function of capping layer thickness in Heusler alloy Co\textsubscript{2}F…
Ultra-fast magnetization manipulation using single femtosecond light and hot-electrons pulse
Y. Xu, M. Deb, G. Malinowski +3
Current induced magnetization manipulation is a key issue for spintronic application. Therefore, deterministic switching of the magnetization at the picoseconds timescale with a si…
Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures
Shouzhong Peng, Weisheng Zhao, Junfeng Qiao +8
Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM).…
Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System
Yue Zhang, Chao Zhang, Jiang Nan +6
Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory i…
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures
Shouzhong Peng, Mengxing Wang, Hongxin Yang +9
Spin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensive attentions due to its non-volatility, high density and low power consumption. The core device in ST…
Current-limiting challenges for all-spin logic devices
Li Su, Youguang Zhang, Jacques-Olivier Klein +4
All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memor…
Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy
Weiwei Lin, Nicolas Vernier, Guillaume Agnus +5
Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field eff…
Electric field control of domain wall logic in piezoelec-tric/ferromagnetic nanodevices
Na Lei, Thibaut Devolder, Guillaume Agnus +7
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage…