317 citations · 2.1k across the 42 of their papers we have counts for
7 papers · 1 filter
Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure
Haiyu Wang, Hao Wu, Yingjie Liu +13
The emergent two-dimensional (2D) ferromagnetic materials with unique magnetic properties have endowed great potential for next-generation spintronic devices with extraordinary mer…
Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device
Tongxi Liu, Zhaohao Wang, Min Wang +4
Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized…
Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers
Luding Wang, Youri L. W. van Hees, Reinoud Lavrijsen +2
All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with sp…
Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy
Yu Zhang, Xueying Zhang, Nicolas Vernier +8
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switchi…
Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness
Anni Cao, Xueying Zhang, Bert Koopmans +6
The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to s…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…
Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
Yu Zhang, Xiaoyang Lin, Jean-Paul Adam +14
Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies…