Implementing Multiple Modes of the Perpendicular Magnetization Switching within a Single Spin Orbit Torque Device

Abstract

Spin orbit torque (SOT) has been considered as one of the promising technologies for the next-generation magnetic random access memory (MRAM). So far, SOT has been widely utilized for inducing various modes of magnetization switching. However, it is challenging to integrate multiple modes of magnetization switching together. In this work we propose a method for implementing both unipolar and bipolar switching of the perpendicular magnetization within a single SOT device. The mode of switching could be easily altered by tuning the amplitude of the applied current. We show that the field-like torque plays an important role in the switching process. The field-like torque induces the precession of the magnetization in the case of unipolar switching, whereas it helps to generate an effective z-component torque in the case of bipolar switching. In addition, the influence of key parameters on the mode of switching is discussed. Our proposal could be used to design novel reconfigurable logic circuits in the near future.

arXiv comment4 pages, 6 figures

References in corpus (6)

• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
• Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system
• Field-free magnetization reversal by spin-Hall effect and exchange bias
• Angular and temperature dependence of current induced spin-orbit effective fields in Ta/CoFeB/MgO nanowires
• Interfacial and bulk spin Hall contributions to field-like spin-orbit torque generated by Iridium
• Effect of interfacial intermixing on spin-orbit torque in Co/Pt bilayers