Gap states and valley-spin filtering in transition metal dichalcogenide monolayers
arXiv:1911.03957 · doi:10.1103/PhysRevB.101.115423
Abstract
The magnetically-induced valley-spin filtering in transition metal dichalcogenide monolayers (, where =Mo, W and =S, Se, Te) promises new paradigm in information processing. However, the detailed understanding of this effect is still limited, regarding its underlying transport processes. Herein, it is suggested that the filtering mechanism can be greately elucidated by the concept of metal-induced gap states (MIGS), appearing in the electrode-terminated materials {\it i.e.} the referential filter setup. In particular, the gap states are predicted here to mediate valley- and spin-resolved charge transport near the ideal electrode/ interface, and therefore to initiate filtering. It is also argued that the role of MIGS increases when the channel length is diminished, as they begin to govern the overall valley-spin transport in the tunneling regime. In what follows, the presented study yields fundamental scaling trends for the valley-spin selectivity with respect to the intrinsic physics of the filter materials. As a result, it facilitates insight into the analyzed effects and provide design guidelines toward efficient valley-spin filter devices, that base on the discussed materials or other hexagonal monolayers with a broken inversion symmetry.
arXiv comment5 pages, 2 figures
References in corpus (30)
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Valley filter and valley valve in graphene
- Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Electronic measurement and control of spin transport in Silicon
- Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field
- Giant and tunable valley degeneracy splitting in MoTe2
- Valley susceptibility of an interacting two-dimensional electron system
- Giant Valley Splitting in Monolayer WS2 by Magnetic Proximity Effect
- Field-induced polarisation of Dirac valleys in bismuth
- Ultrafast Manipulation of Valley Pseudospin
- Large valley splitting in monolayer WS by proximity coupling to an insulating antiferromagnetic substrate
- Spin-valve Effect in NiFe/MoS2/NiFe Junctions
- Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
- Valley Polarization in Si(100) at Zero Magnetic Field
- Universal Quantum Computing with Spin and Valley
- Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS in a perpendicular magnetic field
- Absence of a Band Gap at Interface of a Metal and Highly Doped Monolayer
- Direct Observation of Valley Coupled Topological Current in MoS
- Tunable spin-polarized edge currents in proximitized transition metal dichalcogenides
- A scheme to realize the quantum spin-valley Hall effect in monolayer graphene
- A Unified Perspective of Complex Band Structure: Interpretations, Formulations, and Applications
- Valley- and spin-filter in monolayer MoS
- Valley polarized current and resonant electronic transport in a non-uniform zigzag nanoribbon
- Canonical Schottky barrier heights of the transition metal dichalcogenide monolayers in contact with a metal
- Valley-polarised tunnelling currents in bilayer graphene tunnelling transistors
- Electrical valley filtering in transition metal dichalcogenides