Large valley splitting in monolayer WS by proximity coupling to an insulating antiferromagnetic substrate
arXiv:1711.08545 · doi:10.1103/PhysRevB.97.041405
Abstract
Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this work, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electronic structures of monolayer WS on the MnO(111) surface. Our calculation results suggest that a large valley splitting of 214 meV, which corresponds to a Zeeman magnetic field of 1516 T, is induced in the valence band of monolayer WS. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization, and can be continually tuned by applying an external out-of-plane pressure and in-plane strain. More interestingly, we find that both spin and valley index will flip when the magnetic ordering of MnO is reversed. Besides, owing to the sizeable Berry curvature and time-reversal symmetry breaking in the WS/MnO heterostructure, a spin and valley polarized anomalous Hall current can be generated in the presence of an in-plane electric field, which allow one to detect valleys by the electrical approach. Our results shed light on the realization of valleytronic devices using the antiferromagnetic insulator as the substrate.
7pages,6figures
References in corpus (12)
- Valley polarization in MoS2 monolayers by optical pumping
- Valley filter and valley valve in graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
- Spin-Valleytronics in Silicene: Quantum-Spin-Quantum-Anomalous Hall Insulators and Single-Valley Semimetals
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- Pressure induced metallization with absence of structural transition in layered MoSe2
- Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer
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