Valley-related multiple Hall effect in single-layer VSi2P4

Abstract

2D materials with valley-related multiple Hall effect are both fundamentally intriguing and practically appealing to explore novel phenomena and applications, but have been largely overlooked up to date. Here, using first-principles calculations, we present that valley related multiple Hall effect can exist in single-layer VSi2P4. We identify single-layer VSi2P4 as a ferromagnetic semiconductor with out-of-plane magnetization and valley physics. Arising from the joint effect of inversion symmetry breaking and time reversal symmetry breaking, the exotic spontaneous valley polarization occurs in single-layer VSi2P4, thus facilitating the observation of anomalous valley Hall effect. Moreover, under external strain, band inversion can occur at only one of the valleys of single-layer VSi2P4, enabling the long-sought valley-polarized quantum anomalous Hall effect, and meanwhile the anomalous valley Hall effect is well preserved.. Our work not only enriches the research on valley-related multiple Hall effect, but also opens a new avenue for exploring valley-polarized quantum anomalous Hall effect.

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Cited by in corpus (19)

• Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
• A possible way to achieve anomalous valley Hall effect by piezoelectric effect in $\mathrm{GdC}{\mathrm{l}}_2$ monolayer
• Sensitive electronic correlation effects on electronic properties in ferrovalley material Janus FeClF monolayer
• Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number
• Valley polarization transition driven by biaxial strain in Janus $\mathrm{GdClF}$ monolayer
• A possible electronic state quasi-half-valley-metal in $\mathrm{VG}{\mathrm{e}}_2{\mathrm{P}}_4$ monolayer
• Strain-driven valley states and phase transitions in Janus VSiGeN4 monolayer
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• Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect
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• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• Piezoelectric ferromagnetism in Janus monolayer YBrI: a first-principle prediction
• Correlation-driven topological transition in Janus VSiGeP2As2
• Fast electrically switchable large gap quantum spin Hall states in MGe${}_2$Z${}_4$
• Importance of magnetic shape anisotropy in determining magnetic and electronic properties of monolayer $\mathrm{VS}{\mathrm{i}}_2{\mathrm{P}}_4$
• Tunneling valley Hall effect induced by coherent geometric phase
• Ferroelectric Antiferromagnetic Lifting of Spin-Valley Degeneracy
• Intrinsic Valley-Related Multiple Hall Effect in 2D Organometallic Lattice