Valley susceptibility of an interacting two-dimensional electron system
arXiv:cond-mat/0605692 · doi:10.1103/PhysRevLett.97.186404
Abstract
We report direct measurements of the valley susceptibility, the change of valley population in response to applied symmetry-breaking strain, in an AlAs two-dimensional electron system. As the two-dimensional density is reduced, the valley susceptibility dramatically increases relative to its band value, reflecting the system's strong electron-electron interaction. The increase has a remarkable resemblance to the enhancement of the spin susceptibility and establishes the analogy between the spin and valley degrees of freedom.
5 pages, 2 figures
References in corpus (5)
- Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
- Low-temperature, in situ tunable, uniaxial stress measurements in semiconductors using a piezoelectric actuator
- Observation of Quantum Hall Valley Skyrmions
- Dependence of spin susceptibility of a two-dimensional electron system on the valley degree of freedom
- Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons
Cited by in corpus (12)
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Coulomb Correlations and the Wigner-Mott Transition
- Valley polarization and susceptibility of composite fermions around nu=3/2
- Density dependence of valley polarization energy for composite fermions
- Spin Susceptibility of Interacting Two-dimensional Electrons with Anisotropic Effective Mass
- Theoretical study of even denominator fractions in graphene: Fermi sea versus paired states of composite fermions
- Spin-valley interplay in two-dimensional disordered electron liquid
- Dependence of Effective Mass on Spin and Valley Degrees of Freedom
- Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons
- Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells
- Anisotropic low-temperature piezoresistance in (311)A GaAs two-dimensional holes
- Enhancement of valley susceptibility upon complete spin-polarization