Valley Gapless Semiconductor: Models and Applications
arXiv:2502.02057 · doi:10.1103/5bfl-v1qk
Abstract
The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic devices typically relies on the coupling between valley and other degrees of freedom such as spin, giving rise to valley-spintronics where an external magnetic field manipulates the information stored in valleys. Here, the valley gapless semiconductor is proposed as a potential electrically controlled valleytronic platform because the valley degree of freedom is coupled to the carrier type, i.e., electrons and holes. The valley degree of freedom can be electrically controlled by tuning the carrier type via the device gate voltage. We demonstrate the proposal for realizing a valley gapless semiconductor in the honeycomb lattice with the Haldane and modified Haldane models. The system's valley-carrier coupling is further studied for its transport properties in an all-electrically controlled valley filter device setting. Our work highlights the significance of the valley gapless semiconductor for valleytronic devices.
13 pages, 3 figures
References in corpus (86)
- The electronic properties of graphene
- Spintronics: Fundamentals and applications
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Chiral tunneling and the Klein paradox in graphene
- Valley polarization in MoS2 monolayers by optical pumping
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Experimental realisation of the topological Haldane model
- Valley filter and valley valve in graphene
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Photovoltaic Hall effect in graphene
- Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin
- Andreev reflection and Klein tunneling in graphene
- Floquet Engineering of Quantum Materials
- Magnetic Control of Valley Pseudospin in Monolayer WSe2
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
- Light-induced anomalous Hall effect in graphene
- Periodically-driven quantum systems: Effective Hamiltonians and engineered gauge fields
- Electrical Tuning of Valley Magnetic Moment via Symmetry Control
- Concepts of Ferrovalley Material and Anomalous Valley Hall Effect
- Quantum anomalous Hall effect from intertwined moiré bands
- Photo-Induced Topological Phase Transition and a Single Dirac-Cone State in Silicene
- Electrical control of the valley Hall effect in bilayer MoS2 transistors
- Aharonov-Bohm cages in two-dimensional structures
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Valley-Polarized Quantum Anomalous-Hall Effects in Silicene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Magnetoelectric effects and valley controlled spin quantum gates in transition metal dichalcogenide bilayers
- Spin-Layer Locking Effects in Optical Orientation of Exciton Spin in Bilayer WSe2
- Valley susceptibility of an interacting two-dimensional electron system
- Klein tunneling in graphene: optics with massless electrons
- Valley excitons in two-dimensional semiconductors
- Spin-Valleytronics in Silicene: Quantum-Spin-Quantum-Anomalous Hall Insulators and Single-Valley Semimetals
- Chiral voltage propagation in a self-calibrated topolectrical Chern circuit
- Valley-dependent Brewster angles and Goos-Hanchen effect in strained graphene
- Effective Hamiltonians for periodically driven systems
- From dia- to paramagnetic orbital susceptibility of Dirac cones
- Valley filter in strain engineered graphene
- Valley-spin polarized Landau levels in a monolayer semiconductor
- Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
- Antichiral edge states in a modified Haldane nanoribbon
- How to escape Aharonov-Bohm cages ?
- Electrically tunable valley dynamics in twisted WSe/WSe bilayers
- Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
- Gate controlled spin-valley locking of resident carriers in WSe2 monolayers
- Valley-Layer Coupling: A New Design Principle for Valleytronics
- Topological states in two-dimensional optical lattices
- Observation of photonic antichiral edge states
- Intrinsic valley Hall transport in atomically thin MoS2
- Lightwave-controlled band engineering in quantum materials
- Graphene, a material for high temperature devices; intrinsic carrier density, carrier drift velocity, and lattice energy
- Electrically tunable polarizer based on two-dimensional orthorhombic ferrovalley materials
- Non-integer optical modes in a Möbius-ring resonator
- Experimental Observation of Berry Phases in Optical Moebius-strip Microcavities
- Perfect Valley Filter in Topological Domain Wall
- Observation of Antichiral Edge States in a Circuit Lattice
- Effect of distance on photoluminescence quenching and proximity-induced spin-orbit coupling in graphene-WSe2 heterostructures
- Strain effects on the spin-orbit induced band structure splittings in monolayer MoS2 and graphene
- Valley-polarized quantum anomalous Hall phase and disorder induced valley-filtered chiral edge channels
- Floquet Mechanism for Non-Abelian Fractional Quantum Hall States
- Simulation of interaction-induced chiral topological dynamics on a digital quantum computer
- Nonlinear Valley Hall Effect
- Lattice construction of pseudopotential Hamiltonians for Fractional Chern Insulators
- Tunable Circular Dichroism and Valley Polarization in the Modified Haldane Model
- Floquet Engineering of Haldane Chern Insulators and Chiral bosonic phase transitions
- Valley and spin pump by scattering at non-magnetic disorders
- Valley switch in a graphene superlattice due to pseudo-Andreev reflection
- Light-induced phase crossovers in a quantum spin Hall system
- Klein tunneling in driven-dissipative photonic graphene
- A Non-Hermitian Moiré Valley Filter
- Valley Polarization-Electric Dipole Interference and Nonlinear Chiral Selection Rules in Monolayer WSe
- -Josephson junction in twisted bilayer graphene induced by a valley-polarized state
- Quantum Valley Hall effect without Berry curvature
- Light-enhanced nonlinear Hall effect
- Floquet engineering of topological phase transitions in quantum spin Hall - system
- Valley-Polarized quantum Hall phase in a strain-controlled Dirac system
- Parallel Magnetic Field Tuning of Valley Splitting in AlAs Two-Dimensional Electrons
- Realization of a Valley Superlattice
- Two-dimensional Weyl nodal-line semimetal and antihelical edge states in a modified Kane-Mele model
- Anomalous valley Hall effect in monolayer chromium-based triple-Q magnets
- Quantum valley Hall states in low-buckled counterparts of graphene bilayer
- Valley polarization dynamics of photoinjected carriers at the band edge in room-temperature silicon studied by terahertz polarimetry