Electrically tunable polarizer based on two-dimensional orthorhombic ferrovalley materials
arXiv:1706.06374 · doi:10.1088/2053-1583/aa8d3b
Abstract
The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal two-dimensional materials makes nonvolatile valleytronic applications realizable. Here, we introduce a new member of ferrovalley family with orthorhombic lattice, i.e. monolayer group-IV monochalcogenides (GIVMs), in which the intrinsic valley polarization originates from ferroelectricity, instead of ferromagnetism. Combining the group theory analysis and first-principles calculations, we demonstrate that, different from the valley-selective circular dichroism in hexagonal lattice, linearly polarized optical selectivity for valleys exists in the new type of ferrovalley materials. On account of the distinctive property, a prototype of electrically tunable polarizer is realized. In the ferrovalley-based polarizer, a laser beam can be optionally polarized in x- or y-direction, depending on the ferrovalley state controlled by external electric fields. Such a device can be further optimized to emit circularly polarized radiation with specific chirality and to realize the tunability for operating wavelength. Therefore, we show that two-dimensional orthorhombic ferrovalley materials are the promising candidates to provide an advantageous platform to realize the polarizer driven by electric means, which is of great importance in extending the practical applications of valleytronics.
References in corpus (29)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Phosphorene: A New 2D Material with High Carrier Mobility
- Berry Phase Effects on Electronic Properties
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Valley contrasting physics in graphene: magnetic moment and topological transport
- The Valley Hall Effect in MoS2 Transistors
- Valley filter and valley valve in graphene
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Breaking of valley degeneracy by magnetic field in monolayer MoSe2
- Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS
- Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
- Concepts of Ferrovalley Material and Anomalous Valley Hall Effect
- Valley-selective optical Stark effect in monolayer WS2
- Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
- Giant and tunable valley degeneracy splitting in MoTe2
- Valley susceptibility of an interacting two-dimensional electron system
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides
- Modulation of electronic and mechanical properties of phosphorene through strain
- Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics
- Polarization and valley switching in monolayer group-IV monochalcogenides
- Valleytronics in Tin (II) Sulfide
- Spin-dependent optical response of multiferroic EuO
Cited by in corpus (8)
- Purely in-plane ferroelectricity in monolayer SnS at room temperature
- Colloquium: Physical properties of group-IV monochalcogenide monolayers
- Protected valley states and generation of valley- and spin-polarized current in monolayer MA2Z4
- Group-IV monochalcogenide monolayers: two-dimensional ferroelectrics with weak intra-layer bonds and a phosphorene-like monolayer dissociation energy
- Recent Advances in Unconventional Ferroelectrics and Multiferroics
- Exotic dielectric behaviors induced by pseudo-spin texture in magnetic twisted bilayer
- Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
- Valley Gapless Semiconductor: Models and Applications