Group-IV monochalcogenide monolayers: two-dimensional ferroelectrics with weak intra-layer bonds and a phosphorene-like monolayer dissociation energy
arXiv:1911.10940 · doi:10.1103/PhysRevMaterials.3.124004
Abstract
We performed density functional theory calculations with self-consistent van der Waals corrected exchange-correlation (XC) functionals to capture the structure of black phosphorus and twelve monochalcogenide monolayers and find the following results: (a) The in-plane unit cell changes its area in going from the bulk to a monolayer. The change of in-plane distances implies that bonds weaker than covalent or ionic ones are at work within the monolayers themselves. This observation is relevant for the prediction of the critical temperature . (b) There is a hierarchy of independent parameters that uniquely define a ground state ferroelectric unit cell (and square and rectangular paraelectric unit cells as well): only 5 optimizable parameters are needed to establish the unit cell vectors and the four basis vectors of the ferroelectric ground state unit cell, while square and rectangular paraelectric structures are defined by only 3 or 2 independent optimizable variables, respectively. (c) The reduced number of independent structural variables correlates with larger elastic energy barriers on a rectangular paraelectric unit cell when compared to the elastic energy barrier of a square paraelectric structure. This implies that obtained on a structure that keeps the lattice parameters fixed (for example, using an NVT ensemble) should be larger than the transition temperature on a structure that is allowed to change in-plane lattice vectors (for example, using the NPT ensemble). (d) The dissociation energy (bulk cleavage energy) of these materials is similar to the energy required to exfoliate graphite and MoS. (e) There exists a linear relation among the square paraelectric unit cell lattice parameter and the lattice parameters of the rectangular ferroelectric ground state unit cell. These results highlight the subtle atomistic structure of these novel 2D ferroelectrics.
Submitted on September 17, 2019
References in corpus (40)
- Van der Waals Density Functional for General Geometries
- Van der Waals density functionals applied to solids
- A Higher-Accuracy van der Waals Density Functional
- van der Waals forces in density functional theory: The vdW-DF method
- Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS
- Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
- An exchange functional that tests the robustness of the plasmon description of the van der Waals density functional
- SCAN+rVV10: A promising van der Waals density functional
- Ab initio theory and modeling of water
- Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
- Accurate Measurement of the Cleavage Energy of Graphite
- Design principles for shift current photovoltaics
- The Nature of the Interlayer Interaction in Bulk and Few-Layer Phosphorus
- Large bulk photovoltaic effect and spontaneous polarization of single-layer monochalcogenides
- Diverse anisotropy of phonon transport in two-dimensional IV-VI compounds: A comparative study
- Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides
- Direct Band Gaps in Group IV-VI Monolayer Materials: Binary Counterparts of Phosphorene
- Polarization and valley switching in monolayer group-IV monochalcogenides
- Designing isoelectronic counterparts to layered group V semiconductors
- Valleytronics in Tin (II) Sulfide
- Structural phase transition and material properties of few-layer monochalcogenides
- Quantum Nonlinear Ferroic Optical Hall Effect
- Two-dimensional disorder in black phosphorus and monochalcogenide monolayers
- Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations
- Tuning the ferro- to para-electric transition temperature and dipole orientation of group-IV monochalcogenide monolayers
- Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers
- Photostrictive two-dimensional materials in the monochalcogenide family
- Intrinsic Origin of Enhancement of Ferroelectricity in SnTe Ultrathin Films
- Electrically tunable polarizer based on two-dimensional orthorhombic ferrovalley materials
- Strain and the optoelectronic properties of non-planar phosphorene monolayers
- Mechanisms of pyroelectricity in three- and two-dimensional materials
- Geometric frustration and solid-solid transitions in model 2D tissue
- Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds
- Graphene's morphology and electronic properties from discrete differential geometry
- In-Plane Ferroelectric Tunnel Junction
- Giant spin Hall Effect in two-dimensional monochalcogenides
- Strong second harmonic generation in two-dimensional ferroelectric IV-monochalcogenides
- Ferroelectricity and piezoelectricity in monolayers and nanoplatelets of SnS
- Quantum paraelastic two-dimensional materials
- Evolution of elastic moduli through a two-dimensional structural transformation
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