In-Plane Ferroelectric Tunnel Junction

Abstract

The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of random-access memory (RAM) based on ferroelectric thin films with the in-plane polarization called "in-plane ferroelectric tunnel junction". Apart from non-volatility, lower power usage and faster writing operation compared with traditional dynamic RAMs, our proposal has the advantage of faster reading operation and non-destructive reading process, thus overcomes the write-after-read problem that widely exists in current ferroelectric RAMs. The recent discovered room-temperature ferroelectric IV-VI semiconductor thin films is a promising material platform to realize our proposal.

arXiv comment6 pages, 3 figures + 3 pages of supplemental material

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Cited by in corpus (9)

• Microscopic manipulation of ferroelectric domains in SnSe monolayers at room temperature
• Colloquium: Physical properties of group-IV monochalcogenide monolayers
• Experimental formation of monolayer group-IV monochalcogenides
• Recent advances, perspectives and challenges in ferroelectric synapses
• Topology of atomically thin soft ferroelectric membranes at finite temperature
• Group-IV monochalcogenide monolayers: two-dimensional ferroelectrics with weak intra-layer bonds and a phosphorene-like monolayer dissociation energy
• Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages
• Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
• In-plane quasi-single-domain BaTiO${}_3$ via interfacial symmetry engineering