Accurate Measurement of the Cleavage Energy of Graphite

Abstract

The basal plane cleavage energy (CE) of graphite is a key material parameter for understanding many of the unusual properties of graphite, graphene, and carbon nanotubes. The CE is equal to twice the surface energy and is closely related to the interlayer binding energy and exfoliation energy of graphite. Nonetheless, a wide range of values for these properties have been reported and no consensus has yet emerged as to their magnitude. Here, we report the first direct, accurate experimental measurement of the CE of graphite using a novel method based on the recently discovered self-retraction phenomenon in graphite. The measured value, 0.37 +/- 0.01 J/m2 for the incommensurate state of bicrystal graphite, is nearly invariant with respect to temperature (from 22°C to 198°C) and bicrystal twist angle, and insensitive to impurities (from the atmosphere). The cleavage energy for the ideal ABAB graphite stacking, 0.39 +/- 0.02 J/m2, is calculated based upon a combination of the measured CE and a theoretical calculation. These experimental measurements are ideal for use in evaluating the efficacy of competing theoretical approaches.

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• A Higher-Accuracy van der Waals Density Functional
• Self-Retracting Motion of Graphite Microflakes
• Weak binding between two aromatic rings: feeling the van der Waals attraction by quantum Monte Carlo methods
• van der Waals Interactions Between Thin Metallic Wires and Layers

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