: A narrow gap 2D semiconductor with vacancy-induced semiconductor-metal transition
arXiv:1904.08742 · doi:10.1007/s10853-019-03796-y
Abstract
Searching for novel two-dimensional (2D) materials is highly desired in the field of nanoelectronics. We here propose a new 2D crystal barium tri-arsenide () with a series of encouraging functionalities. Being kinetically and thermally stable, the monolayer and bilayer forms of possess narrow indirect band gaps of 0.87 eV and 0.40 eV, respectively, with high hole mobilities on the order of ~. The electronic properties of 2D can be manipulated by controlling the layer thickness. The favorable cleavage energy reveals that layered can be produced as a freestanding 2D material. Furthermore, by introducing vacancy defects monolayer can be transformed from a semiconductor to a metal. 2D may find promising applications in nanoelectronic devices.
22 pages, 4 figures; Supporting Information contains 10 pages and 12 figures
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