Band alignment of monolayer CaP, CaAs, BaAs and the role of - orbital interactions in the formation of conduction band minima
arXiv:2012.02318 · doi:10.1039/D1CP00099C
Abstract
Recently, a number of new two-dimensional (2D) materials based on puckered phosphorene and arsenene have been predicted with moderate band gaps, good absorption properties and carrier mobilities superior to transition metal dichalcogenides. For heterojunction applications, it is important to know the relative band alignment of these new 2D materials. We report the band alignment of puckered CaP, CaAs and BaAs monolayers at the quasiparticle level of theory (GW), calculating band offsets for isolated monolayers according to the electron affinity rule. Our calculations suggest that monolayer CaP, CaAs and BaAs all form type-II (staggered) heterojunctions. Their quasiparticle gaps are 2.1 (direct), 1.8 (direct) and 1.5 eV (indirect), respectively. We also examine trends in the electronic structure in the light of chemical bonding analysis. We show that the indirect band gap in monolayer BaAs is caused by relatively strong As - Ba bonding interactions that stabilize the conduction band away from the point between and .
arXiv comment23 pages, 4 figures
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