229 citations
- Institut de Microélectronique, Electromagnétisme et PhotoniqueFR59 papers
- Centre National de la Recherche ScientifiqueFR57 papers
- Institut polytechnique de GrenobleFR55 papers
- Université Grenoble AlpesFR28 papers
- Université Savoie Mont BlancFR27 papers
- Université Joseph FourierFR21 papers
- Institut NéelFR17 papers
- Institució Catalana de Recerca i Estudis AvançatsES11 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR10 papers
- Institut Català de Nanociència i NanotecnologiaES10 papers
- UCLouvainBE10 papers
- CEA GrenobleFR9 papers
72 papers
Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons
Georgia Samara, Christoforos Theodorou, Alexandros Mavropoulis +3
High performance devices consisting of interdigitated electrodes (IDEs) on top of single-layer graphene (SLG) are candidates with favorable prospects for sensing applications. Grap…
3D-Structured Polyethylene Windows for Low-Loss Transmission in Wideband Cryogenic Terahertz Systems
François Joint, Igor Lapkin, Pierre-Baptiste Vigneron +10
We present the design, fabrication, and characterisation of a broadband vacuum window and infrared filter based on ultra-high molecular weight polyethylene (UHMWPE) for millimeter…
Sustainable wafer-scale integration of epitaxial ZnO on silicon for piezoelectric devices
D. Sanchez-Fuentes, R. Desgarceaux, A. Rahal +13
To sustainably support the ongoing energetic transition, we need functional metal oxides capable of converting energy, and produce storage, and sensing devices. However, these mate…
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou +1
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study…
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis +3
Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In th…