12 citations · 40 across the 10 of their papers we have counts for
10 papers
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou +1
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study…
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis, P Normand +4
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
N Vasileiadis, P Loukas, A Mavropoulis +4
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…
Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
N Vasileiadis, A Mavropoulis, I Karafyllidis +2
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circu…
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…
Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas +2
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic devic…