12 citations · 46 across the 14 of their papers we have counts for
14 papers
Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons
Georgia Samara, Christoforos Theodorou, Alexandros Mavropoulis +3
High performance devices consisting of interdigitated electrodes (IDEs) on top of single-layer graphene (SLG) are candidates with favorable prospects for sensing applications. Grap…
Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6
This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…
Breakdown characteristics of SiNx with different stoichiometries for resistive memories
A. E. Mavropoulis, I. Kanellopoulos, G. Pissanos +6
The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD depo…
SiNx RRAMs performance with different stoichiometries
A. E. Mavropoulis, G. Pissanos, N. Vasileiadis +3
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD depositio…
The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs
Nikolaos Vasileiadis, Alexandros Mavropoulis, Christoforos Theodorou +1
This research explores the characteristics of two CMOS-compatible RRAM cells utilizing silicon nitride as the switching material. By employing SET/RESET pulse sequences, the study…
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis, P Normand +4
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
N Vasileiadis, P Loukas, A Mavropoulis +4
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…
Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
N Vasileiadis, A Mavropoulis, I Karafyllidis +2
In this work, the fabrication of crossbar arrays of silicon nitride resistive memories on silicon-on-insulator substrate and their utilization to realize multi-rationed logic circu…
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…
Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas +2
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic devic…
Silicon nitride resistance switching MIS cells doped with silicon atoms
A Mavropoulis, N Vasileiadis, C Bonafos +4
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert…
Effect of Silicon Atom Doping in SiNx Resistive Switching Films
A Mavropoulis, N Vasileiadis, C Bonafos +4
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impac…
1/f and Random Telegraph Noise of Single-Layer Graphene Devices with Interdigitated Electrodes
Georgia Samara, Nikolaos Vasileiadis, Alexandros Mavropoulis +3
Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In th…
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
A. E. Mavropoulis, N. Vasileiadis, P. Normand +4
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament f…