Breakdown characteristics of SiNx with different stoichiometries for resistive memories
arXiv:2512.09681 · doi:10.1109/NMDC64551.2025.11234186
Abstract
The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells.