6 citations · 11 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2025★ 6 cited
Silicon nitride resistance switching MIS cells doped with silicon atoms
A Mavropoulis, N Vasileiadis, C Bonafos +4
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert…
physics.app-ph2025★ 3 cited
Effect of Silicon Atom Doping in SiNx Resistive Switching Films
A Mavropoulis, N Vasileiadis, C Bonafos +4
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impac…
physics.app-ph2025★ 2 cited
Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
A. E. Mavropoulis, N. Vasileiadis, P. Normand +4
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament f…