12 citations · 18 across the 4 of their papers we have counts for
4 papers
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis, P Normand +4
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
N Vasileiadis, P Loukas, A Mavropoulis +4
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Nikolaos Vasileiadis, Panagiotis Loukas, Panagiotis Karakolis +7
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile me…