12 citations · 17 across the 3 of their papers we have counts for
3 papers
physics.app-ph2025★ 1 cited
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis, P Normand +4
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…
physics.app-ph2025★ 4 cited
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
N Vasileiadis, P Loukas, A Mavropoulis +4
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…
physics.app-ph2025★ 12 cited
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…