Effect of SOI substrate on silicon nitride resistance switching using MIS structure

Abstract

Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, the fabrication and electrical characterization of a fully compatible CMOS process on SOI substrate of 1R silicon SiN-based resistance switching (RS) MIS devices is presented. The RS characteristics are compared with the same devices previously fabricated on bulk silicon.

Cited by in corpus (6)

• Silicon nitride resistance switching MIS cells doped with silicon atoms
• Analysis of random telegraph noise in resistive memories: The case of unstable filaments
• Novel crossbar array of silicon nitride resistive memories on SOI enables memristor rationed logic
• Effect of Al2O3 on the operation of SiNX-based MIS RRAMs
• Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
• The Role of Tunneling Oxide in the Low Frequency Noise of Multi-level Silicon Nitride ReRAMs