12 citations · 27 across the 7 of their papers we have counts for
7 papers
Synaptic MIS Silicon Nitride Resistance Switching Memory Cells on SOI Substrate
AE Mavropoulis, N Vasileiadis, P Normand +4
In this work, the comparison of resistive memory MIS single-cells without selector (1R), having silicon nitride as switching dielectric, fabricated on SOI and bulk Si wafers is dem…
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
N Vasileiadis, P Loukas, A Mavropoulis +4
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…
Effect of SOI substrate on silicon nitride resistance switching using MIS structure
A Mavropoulis, N Vasileiadis, C Theodorou +4
Several resistive memory technologies (RRAMs) are prominent, but few are fulfilling the requirements for CMOS integration and meet the commercialization standards. In this work, th…
Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas +2
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic devic…
Effect of Silicon Atom Doping in SiNx Resistive Switching Films
A Mavropoulis, N Vasileiadis, C Bonafos +4
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impac…
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Nikolaos Vasileiadis, Panagiotis Loukas, Panagiotis Karakolis +7
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile me…
Versatile Filamentary Resistive Switching Model
Iosif-Angelos Fyrigos, Vasileios Ntinas, Georgios Ch. Sirakoulis +2
Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavior…