6 citations · 17 across the 6 of their papers we have counts for
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Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates
A. E. Mavropoulis, P. Karakolis, N. Vasileiadis +6
This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrog…
Breakdown characteristics of SiNx with different stoichiometries for resistive memories
A. E. Mavropoulis, I. Kanellopoulos, G. Pissanos +6
The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD depo…
SiNx RRAMs performance with different stoichiometries
A. E. Mavropoulis, G. Pissanos, N. Vasileiadis +3
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD depositio…
Silicon nitride resistance switching MIS cells doped with silicon atoms
A Mavropoulis, N Vasileiadis, C Bonafos +4
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert…