643 citations · 1.3k across the 19 of their papers we have counts for
19 papers
Domain Wall-mediated Interfacial Ferroelectric Switching
Hao-Wen Xu, Wen-Cheng Fan, Jun-Ding Zheng +4
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polariza…
Breathing ferroelectricity induced topological valley states in kagome niobium halide monolayers
Kai-Qi Wang, Jun-Ding Zheng, Wen-Yi Tong +1
In recent years, kagome lattices have garnered significant attention for their diverse properties in topology, magnetism, and electron correlations. However, the exploration of bre…
Machine learning exploration of topological polarization pattern in hexagonal boron nitride moiré superlattice
Jun-Ding Zheng, Cheng-Shi Yao, Song-Chuan Zhou +5
Twisted moiré supercells, which can be approximated as a combination of sliding bilayers and constitute various topologically nontrivial polarization patterns, attract extensive at…
Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems
Yun-Qin Li, Yu-Ke Zhang, Xin-Le Lu +5
As an emerging magnetic phase, altermagnets with compensated magnetic order and non-relativistic spin-splitting have attracted widespread attention. Currently, strain engineering i…
Quantum valley Hall states in low-buckled counterparts of graphene bilayer
Yu-Hao Shen, Jun-Ding Zheng, Wen-Yi Tong +3
With low-buckled structure for each layer in graphene bilayer system, there breaks inversion symmetry (P-symmetry) for one stacking when both A and B sublattices in top layer are a…
Dielectric response in twisted MoS2 bilayer facilitated by spin-orbit coupling effect
Yu-Hao Shen, Jun-Ding Zheng, Wen-Yi Tong +3
Twisted van der Waals bilayers offer ideal two-dimensional (2D) platforms for exploring the intricate interplay between the spin and charge degrees of freedom of electrons. By inve…
Nanotube ferroelectric tunnel junctions with giant tunneling electroresistance ratio
Jiu-Long Wang, Yi-Feng Zhao, Wen Xu +4
Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantage of device miniaturization.…
Exotic dielectric behaviors induced by pseudo-spin texture in magnetic twisted bilayer
Yu-Hao Shen, Wen-Yi Tong, He Hu +2
Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice syst…
Electric field control of interaction between magnons and quantum spin defects
Abhishek Bharatbhai Solanki, Simeon I. Bogdanov, Avinash Rustagi +10
Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of…
Concept of the half-valley-metal and quantum anomalous valley Hall effect
He Hu, Wen-Yi Tong, Yu-Hao Shen +2
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focu…
Emergent exotic chirality dependent dielectricity in magnetic twisted bilayer system
Yu-Hao Shen, Wen-Yi Tong, He Hu +2
Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30 degree twisted bilayer honeycomb lattice syst…
Giant dielectric difference in chiral asymmetric bilayers
Yu-Hao Shen, Wen-Yi Tong, He Hu +1
Twistronics rooted in the twist operation towards bilayer van der Waals crystals is of both theoretical and technological importance. The realize of the correlated electronic behav…
Electrically tunable polarizer based on two-dimensional orthorhombic ferrovalley materials
Xin-Wei Shen, Wen-Yi Tong, Shi-Jing Gong +1
The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal two-dimensi…
Manipulation of the large Rashba spin splitting in polar two-dimensional transition metal dichalcogenides
Qun-Fang Yao, Jia Cai, Wen-Yi Tong +5
Transition metal dichalcogenide (TMD) monolayers MXY (M=Mo, W, X(not equal to)Y=S, Se, Te) are two-dimensional polar semiconductors. Setting WSeTe monolayer as an example and using…
Concepts of Ferrovalley Material and Anomalous Valley Hall Effect
Wen-Yi Tong, Shi-Jing Gong, Xiangang Wan +1
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electroni…
First-principles studies of multiferroic and magnetoelectric materials
Yue-Wen Fang, Hang-Chen Ding, Wen-Yi Tong +5
Multiferroics are materials where two or more ferroic orders coexist owing to the interplay between spin, charge, lattice and orbital degrees of freedom. The explosive expansion of…
Magnetic Ordering Induced Giant Optical Property Change in Tetragonal BiFeO3
Wen-Yi Tong, Hang-Chen Ding, Shi-jing Gong +2
Magnetic ordering, as one of the most important characteristics in magnetic materials, could have significant influence on the band structure, spin dependent transport, and other i…
Engineering the magnetic anisotropy of atomic-scale nanostructure under electric field
Wanjiao Zhu, Hang-Chen Ding, Wen-Yi Tong +3
Atomic-scale magnetic nanostructures are promising candidates for future information processing devices. Utilizing external electric field to manipulate their magnetic properties i…
Spin-dependent optical response of multiferroic EuO
Wen-Yi Tong, Hang-Chen Ding, Yong-Chao Gao +3
Using first-principles density functional calculations, electronic and optical properties of ferromagnetic semiconductor EuO are investigated. In particular, we have developed a wa…