Electrically tunable valley dynamics in twisted WSe/WSe bilayers
arXiv:1912.11306 · doi:10.1103/PhysRevLett.124.217403
Abstract
The twist degree of freedom provides a powerful new tool for engineering the electrical and optical properties of van der Waals heterostructures. Here, we show that the twist angle can be used to control the spin-valley properties of transition metal dichalcogenide bilayers by changing the momentum alignment of the valleys in the two layers. Specifically, we observe that the interlayer excitons in twisted WSe/WSe bilayers exhibit a high (>60%) degree of circular polarization (DOCP) and long valley lifetimes (>40 ns) at zero electric and magnetic fields. The valley lifetime can be tuned by more than three orders of magnitude via electrostatic doping, enabling switching of the DOCP from ~80% in the n-doped regime to <5% in the p-doped regime. These results open up new avenues for tunable chiral light-matter interactions, enabling novel device schemes that exploit the valley degree of freedom.
31 pages, 4 figures in main text, 5 figures in supplemental materials
References in corpus (17)
- Valley polarization in MoS2 monolayers by optical pumping
- The Valley Hall Effect in MoS2 Transistors
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Valley filter and valley valve in graphene
- Observation of Moiré Excitons in WSe2/WS2 Heterostructure Superlattices
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Valley susceptibility of an interacting two-dimensional electron system
- Exciton Valley Dynamics probed by Kerr Rotation in WSe2 Monolayers
- Theory of optical absorption by interlayer excitons in transition metal dichalcogenide heterobilayers
- Atomically thin mirrors made of monolayer semiconductors
- Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
- Long-Lived Valley Polarization of Intra-Valley Trions in Monolayer WSe2
- Exciton dynamics in WSe2 bilayers
- The valley Nernst effect in WSe
Cited by in corpus (39)
- Magic in twisted transition metal dichalcogenide bilayers
- Engineering symmetry breaking in two-dimensional layered materials
- Moiré Excitons Correlated with Superlattice Structure in Twisted WSe/WSe Homobilayers
- Excitons in mesoscopically reconstructed moiré heterostructures
- Moiré metrology of energy landscapes in van der Waals heterostructures
- Nonequilibrium Lattice Dynamics in Monolayer MoS2
- Multifaceted moiré superlattice physics in twisted WSe bilayers
- Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors
- Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides
- Tunable valley and spin splittings in bilayer
- Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes
- Chirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene
- Reconstruction of moiré lattices in twisted transition metal dichalcogenide bilayers
- Stacking-dependent exciton multiplicity in WSe bilayers
- Moiré induced topology and flat bands in twisted bilayer WSe: A first-principles study
- Spatially indirect intervalley excitons in bilayer WSe2
- Chiral valley phonons and flat phonon bands in moiré materials
- Chirality of Valley Excitons in Monolayer Transition-Metal Dichalcogenides
- Valley two-qubit system in a MoS-monolayer gated double quantum dot
- Flat-band plasmons in twisted bilayer transition metal dichalcogenides
- Leaky exciton condensates in transition metal dichalcogenide moiré bilayers
- Excitonic Absorption Signatures of Twisted Bilayer WSe by Electron Energy-Loss Spectroscopy
- Visualizing giant ferroelectric gating effects in large-scale WSe/BiFeO heterostructures
- Switching between Mott-Hubbard and Hund physics in moiré quantum simulators
- Spin-valley dynamics in alloy-based transition metal dichalcogenide heterobilayers
- Tuning exciton complexes in twisted bilayer WSe2 at intermediate misorientation
- Valleytronic full configuration-interaction approach: An application to the excitation spectra of Si double-dot qubits
- Electrically tunable layer-hybridized trions in doped WSe bilayers
- Emergence of flat bands in the quasicrystal limit of boron nitride twisted bilayers
- Two dimensional semiconductors: optical and electronic properties
- Electric-field-tunable intervalley excitons and phonon replicas in bilayer WSe
- Atomic relaxation and flat bands in strain-engineered transition metal dichalcogenide bilayer moiré systems
- Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches
- Valley Gapless Semiconductor: Models and Applications
- Effective K valley Hamiltonian for TMD bilayers under pressure and application to twisted bilayers with pressure-induced topological phase transitions
- Electric field tunable bands in doubly aligned bilayer graphene hBN moire superlattice
- Selective Excitation of Subwavelength Atomic Clouds
- Moire-Engineered Excitonic Landscape and Phonon-Mediated Recombination in Twisted WSe2 Bilayers
- Realization of Nearly Dispersionless Bands with Strong Orbital Anisotropy from Destructive Interference in Twisted Bilayer MoS2