Giant magnetic field from moiré induced Berry phase in homobilayer semiconductors
arXiv:1906.05499 · doi:10.1093/nsr/nwz117
Abstract
When quasiparticles move in condensed matters, the texture of their internal quantum structure as a function of position and momentum can give rise to Berry phases that have profound effects on materials properties. Seminal examples include the anomalous Hall and spin Hall effects from the momentum-space Berry phases in homogeneous crystals. Here we explore a conjugate form of electron Berry phase arising from the moiré pattern, the texture of atomic configurations in real space. In homobilayer transition metal dichalcogenides, we show the real-space Berry phase from moiré manifests as a periodic magnetic field up to hundreds of Tesla. This quantity tells apart moiré patterns from different origins, which can have identical potential landscape but opposite quantized magnetic flux per supercell. For low energy carriers, the homobilayer moirés realize topological flux lattices for the quantum spin Hall effect. An interlayer bias can continuously tune the spatial profile of moiré magnetic field, whereas the flux per supercell is a topological quantity that can only have a quantized jump observable at moderate bias. We also reveal the important role of the non-Abelian Berry phase in shaping the energy landscape in small moiré. Our work points to new possibilities to access ultra-high magnetic field that can be tailored in the nanoscale by electrical and mechanical controls.
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