Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides
arXiv:2308.07488 · doi:10.1103/PhysRevLett.132.146401
Abstract
A series of recent experimental works on twisted MoTe homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole doping of , and the fractional quantum anomalous Hall effect is observed at and . In this work, we investigate the electronic properties of AA-stacked twisted bilayer MoTe at by -space Hartree-Fock calculations. We find that the phase diagram is qualitatively similar to the phase diagram of a Kane-Mele-Hubbard with staggered onsite potential. A noteworthy phase within the diagram is the antiferromagnetic Chern insulator, stabilized by the external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. We highlight that the antiferromagnetic Chern insulator phase is most evident at a twist angle of approximately . Our research proposes the potential of realizing a Chern insulator beyond , and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moiré superlattices.
References in corpus (4)
Cited by in corpus (20)
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