Valley-Layer Coupling: A New Design Principle for Valleytronics

Abstract

We introduce the concept of valley-layer coupling (VLC) in two-dimensional materials, where the low-energy electronic states in the emergent valleys have valley-contrasted layer polarization such that each state is spatially localized on the top or bottom super-layer. The VLC enables a direct coupling between valley and gate electric field, opening a new route towards electrically controlled valleytronics. We analyze the symmetry requirements for the system to host VLC, demonstrate our idea via first-principles calculations and model analysis of a concrete 2D material example, and show that an electric, continuous, wide-range, and switchable control of valley polarization can be achieved by VLC. Furthermore, we find that systems with VLC can exhibit other interesting physics, such as valley-contrasting linear dichroism and optical selection of the electric polarization of interlayer excitons.

6 pages, 4 figures

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Cited by in corpus (29)

• Valley-dependent properties of monolayer MoSi${}_2$N${}_4$, WSi${}_2$N${}_4$ and MoSi${}_2$As${}_4$
• Predictable gate-field control of spin in altermagnets with spin-layer coupling
• Recent Advances in Two-Dimensional Metal Monochalcogenides
• Valley pseudospin in monolayer MoSi2N4 and MoSi2As4
• Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors
• Tunable valley and spin splittings in $\mathrm{VS}{\mathrm{i}}_2{\mathrm{N}}_4$ bilayer
• Cornertronics in Two-Dimensional Second-Order Topological Insulators
• Spin-valley polarized edge states and quantum anomalous Hall states controlled by side potential in 2D honeycomb lattices
• Enforced symmetry breaking for anomalous valley Hall effect in two-dimensional hexagonal lattices
• Quantum Valley Hall effect without Berry curvature
• Perovskite-type YRh${}_3$B with multiple types of nodal point and nodal line states
• Two-dimensional CoSe structures: Intrinsic magnetism, strain-tunable anisotropic valleys, magnetic Weyl point, and antiferromagnetic metal state
• Dispersion behavior of two dimensional monochalcogenides
• Layer Control of Magneto-Optical Effects and Their Quantization in Spin-Valley Splitting Antiferromagnets
• When Energy and Information Revolutions Meet 2D Janus
• A ballistic electron source with magnetically-controlled valley polarization in bilayer graphene
• Two-dimensional Dirac semiconductor and its material realization
• Realization of valley-spin polarized current via parametric pump in monolayer $\mathrm{Mo}{\mathrm{S}}_2$
• Tunneling valley Hall effect induced by coherent geometric phase
• Valley and spin splittings in a valley-layer-locked monolayer via atomic adsorption
• Light-induced ultrafast glide-mirror symmetry breaking in black phosphorus
• Chirality-2 fermion induced anti-Klein tunneling in 2D checkerboard lattice
• Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect
• Hidden Zeeman-type spin polarization in bulk crystals
• Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in QL-XSbO${}_2$ (X= Li, Na)
• Valley Gapless Semiconductor: Models and Applications
• Layer-dependent transport properties in the Moiré of strained homobilayer transition metal dichalcogenides
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems
• Intrinsic nonlinear valley Nernst effect