Spin-valley filtering in strained graphene structures with artificially induced carrier mass and spin-orbit coupling

Abstract

The interplay of massive electrons with spin-orbit coupling in bulk graphene results in a spin-valley dependent gap. Thus, a barrier with such properties can act as a filter, transmitting only opposite spins from opposite valleys. In this Letter we show that strain induced pseudomagnetic field in such a barrier will enforce opposite cyclotron trajectories for the filtered valleys, leading to their spatial separation. Since spin is coupled to the valley in the filtered states, this also leads to spin separation, demonstrating a spin-valley filtering effect. The filtering behavior is found to be controllable by electrical gating as well as by strain.

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Cited by in corpus (43)

• Graphene Nanobubbles as Valley Filters and Beamsplitters
• Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate
• Light-Induced Valleytronics in Pristine Graphene
• Valley-Layer Coupling: A New Design Principle for Valleytronics
• Spin-valley filtering in strained graphene structures with artificially induced carrier mass and spin-orbit coupling
• Current splitting and valley polarization in elastically deformed graphene
• Floquet-Engineered Valleytronics in Dirac Systems
• Valley engineering by strain in Kekulé-distorted graphene
• Tailoring mechanically-tunable strain fields in graphene
• Strain controlled valley filtering in multi-terminal graphene structures
• Valley polarization induced second harmonic generation in graphene
• Tunable Anomalous Andreev Reflection and Triplet Pairings in Spin Orbit Coupled Graphene
• Electron optics in phosphorene pn junctions: Negative reflection and anti super-Klein tunneling
• Strain-engineering of twist-angle in graphene/hBN superlattice devices
• Uniformity of the pseudomagnetic field in strained graphene
• Controlling Valley-Polarisation in Graphene via Tailored Light Pulses
• Effective Dirac Hamiltonian for anisotropic honeycomb lattices: optical properties
• A scheme to realize the quantum spin-valley Hall effect in monolayer graphene
• All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
• Cornertronics in Two-Dimensional Second-Order Topological Insulators
• Valley polarization braiding in strained graphene
• Interplay between destructive quantum interference and symmetry-breaking phenomena in graphene quantum junctions
• Antiferromagnetic spin valve from heterostructure of two-dimensional hexagonal crystals
• Partial positive refraction in asymmetric Veselago lenses of uniaxially strained graphene
• Enhanced asymmetric valley scattering by scalar fields in non-uniform out-of-plane deformations in graphene
• Strain Controlled Spin and Charge Pumping in Graphene Devices via Spin-orbit Coupled Barriers
• Electric field-induced valley degeneracy lifting in uniaxial strained graphene: evidence from magnetophonon resonance
• Gradient-index electron optics in graphene pn junctions
• Minimal Geometry for Valley Filtering in Graphene
• Spin Transport and Spin Pump in Graphene-like Materials: Effect of tilt in Dirac cones
• Kekulé Induced Valley Birefringence and Skew Scattering in Graphene
• Switchable valley filter based on a graphene $p$-$n$ junction in a magnetic field
• Graphene-based spin switch device via modulated Rashba field and strain
• Trigonal warping induced terraced spin texture and nearly perfect spin polarization in graphene with Rashba effect
• Orbital magnetic moments in insulating Dirac systems: Impact on magnetotransport in graphene van der Waals heterostructures
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• Chiral properties of topological-state loops
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• Trigonal warping, pseudodiffusive transport, and finite-system version of the Lifshitz transition in magnetoconductance of bilayer-graphene Corbino disks
• Gate control of lattice-pseudospin currents in graphene on WS2: Effect of sublattice symmetry breaking and spin-orbit interaction
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• Spin-Valley Beam Splitter in Graphene
• Quantum transport of Dirac fermions in selected graphene nanosystems away from the charge-neutrality point