Valley-dependent properties of monolayer MoSiN, WSiN and MoSiAs
arXiv:2009.13253 · doi:10.1103/PhysRevB.102.235435
Abstract
In a recent work, new two-dimensional materials, the monolayer MoSiN and WSiN, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSiAs, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSiN, WSiN and MoSiAs. We show that these materials are semiconductors, with a pair of Dirac-type valleys located at the corners of the hexagonal Brillouin zone. Due to the broken inversion symmetry and the effect of spin-orbit coupling, the valley fermions manifest spin-valley coupling, valley-contrasting Berry curvature, and valley-selective optical circular dichroism. We also construct the low-energy effective model for the valleys, calculate the spin Hall conductivity and the permittivity, and investigate the strain effect on the band structure. Our result reveals interesting valley physics in monolayer MoSiN, WSiN and MoSiAs, suggesting their great potential for valleytronics and spintronics applications.
10 pages,10 figures
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- Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors
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- Novel Two-Dimensional Layered MSiN (M = Mo, W): New Promising Thermal Management Materials
- Electronic properties and quasi-particle model of monolayer MoSiN
- Manipulation of valley and spin properties in two-dimensional Janus WSiGeZ (Z=N,P, As) through symmetry control
- Weyl nodal line induced pairing in Ising superconductor and high critical field
- Vertical Strain-Induced Modification of the Electrical and Spin Properties of Monolayer MoSi2X4 (X= N, P, As and Sb)
- Switchable large-gap quantum spin Hall state in two-dimensional MSiZ materials class
- Triggering superconductivity, semiconducting states, and ternary valley structure in graphene via functionalization with Si-N layers
- Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer MoSiN
- Fast electrically switchable large gap quantum spin Hall states in MGeZ
- Chiral phonons entangled with multiple Hall effects and unified convention for pseudoangular momentum in 2D materials
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- Multiple types of spin textures and robust valley physics in MPX
- Interlayer couplings in homobilayer structures of MSi2X4 (M = Mo/W, X = N/P/As)
- Strain Modulated Electronic and Optical Properties of Laterally Stitched MoSi2N4/XSi2N4 (X=W, Ti) 2D Heterostructures