Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

Abstract

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

arXiv comment8 pages, 12 figures

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Cited by in corpus (4)

• Tunable electronic properties and band alignments of MoSi${}_2$N${}_4$/GaN and MoSi${}_2$N${}_4$/ZnO van der Waals heterostructures
• A comprehensive study of complex non-adiabatic exciton dynamics in MoSi${}_2$N${}_4$
• Chiral phonons entangled with multiple Hall effects and unified convention for pseudoangular momentum in 2D materials
• Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling