Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

Abstract

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

8 pages, 12 figures

References in corpus (7)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
• Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles
• Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles
• High intrinsic lattice thermal conductivity in monolayer MoSi${}_2$N${}_4$
• Semiconductor-to-metal transition in bilayer MoSi${}_2$N${}_4$ and WSi${}_2$N${}_4$ with strain and electric field