93 citations · 464 across the 28 of their papers we have counts for
29 papers
High-Throughput Screening of 2D Photocatalyst Heterostructures with Suppressed Electron-Hole Recombination for Solar Water Splitting
Shivanand Yadav, Jainandan Kumar Modi, Raihan Ahammed +4
Efficient and scalable photocatalysts for solar water splitting remain a critical challenge in renewable energy research. The work presents a high-throughput first-principles disco…
Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
Keshari Nandan, Ateeb Naseer, Amit Agarwal +2
Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cell…
Energy-Efficient Cryogenic Ternary Content Addressable Memory using Ferroelectric SQUID
Shamiul Alam, Simon Thomann, Shivendra Singh Parihar +4
Ternary content addressable memories (TCAMs) are useful for certain computing tasks since they allow us to compare a search query with a whole dataset stored in the memory array. T…
Engineering Si-Qubit MOSFETs: A Phase-Field Modeling Approach Integrating Quantum-Electrostatics at Cryogenic Temperatures
Nilesh Pandey, Dipanjan Basu, Yogesh Singh Chauhan +2
This study employs advanced phase-field modeling to investigate Si-based qubit MOSFETs, integrating electrostatics and quantum mechanical effects. We adopt a comprehensive modeling…
Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers
Ateeb Naseer, Achintya Priydarshi, Pritam Ghosh +4
Two-dimensional ferroelectric monolayers are promising candidates for compact memory devices and flexible electronics. Here, through first-principles calculations, we predict room…
Versatility of type-II van der Waals heterostructures: a case study with SiH-CdCl2
Achintya Priydarshi, Abhinav Arora, Yogesh Singh Chauhan +2
Unlike bilayers or a few layers thick materials, heterostructures are designer materials formed by assembling different monolayers in any desired sequence. As a result, while multi…
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
Zijian Zhao, Shan Deng, Swetaki Chatterjee +15
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers fr…
Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe
Imran Ahamed, Atasi Chakraborty, Pushpendra Yadav +4
Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferro…
Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series
Keshari Nandan, Somnath Bhowmick, Yogesh S. Chauhan +1
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by th…
Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films
Ashok P, Yogesh Singh Chauhan, Amit Verma
Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths…
Static negative susceptibility in ferromagnetic material induced by domain wall motion: an aspect of superconductor state
Nilesh Pandey, Yogesh Singh Chauhan
Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of mag…
Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance
Nilesh Pandey, Yogesh Singh Chauhan
In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhib…
Dynamics of Multi-Domains in Ferroelectric Tunnel Junction
Nilesh Pandey, Yogesh Singh Chauhan
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with…
Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
Achintya Priydarshi, Yogesh Singh Chauhan, Somnath Bhowmick +1
2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=…
Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors
Keshari Nandan, Barun Ghosh, Amit Agarwal +2
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first…
PdSe2 based field-effect transistors
Keshari Nandan, Amit Agarwal, Somnath Bhowmick +1
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance…
Effect of Vanadium Thickness and Deposition Temperature on VO2 Synthesis using Atmospheric Pressure Thermal Oxidation
Ashok P, Yogesh Singh Chauhan, Amit Verma
Vanadium dioxide (VO2) is a phase transition material that undergoes a reversible insulator-metal phase transition at ~ 68 C. Atmospheric pressure thermal oxidation (APTO) of vanad…
High Infrared Reflectance Modulation in VO2 Films Synthesized on Glass and ITO coated Glass substrates using Atmospheric Oxidation of Vanadium
Ashok P, Yogesh Singh Chauhan, Amit Verma
Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modula…
Vanadium Dioxide Thin Films Synthesized Using Low Thermal Budget Atmospheric Oxidation
P Ashok, Yogesh Singh Chauhan, Amit Verma
Vanadium dioxide is a complex oxide material, which shows large resistivity and optical reflectance change while transitioning from the insulator to metal phase at ~68 °C. In this…
Temperature Dependence of Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition
Gavax Joshi, Yogesh Singh Chauhan, Amit Verma
has drawn significant attention for power electronics and deep ultraviolet (UV) photodetectors owing to its wide bandgap of ~ 4.4 - 4.9 eV and high electric breakdown s…
Variability Analysis in a 3-D Multi-Granular HfZrO Ferroelectric Capacitor
Nilesh Pandey, Karishma Qureshi, Yogesh Singh Chauhan
A simulation-based study of variability of remnant polarization in a multi-granular 3-D ultra-thin ferroelectric (FE) capacitor is presented in this paper. The…
Analytical modeling and Dynamics of Multi-Domains in Negative-Capacitance MFIS-FETs
Nilesh Pandey, Yogesh Singh Chauhan
Analytical modeling and dynamics of multidomain in metal-ferroelectric-insulator-semiconductor (MFIS)-FETs are presented in this paper. The formation of multi-domain (MD) leads to…
Power Side-Channel Attacks in Negative Capacitance Transistor (NCFET)
Johann Knechtel, Satwik Patnaik, Mohammed Nabeel +5
Side-channel attacks have empowered bypassing of cryptographic components in circuits. Power side-channel (PSC) attacks have received particular traction, owing to their non-invasi…
Intrinsic magnetism in monolayer transition metal trihalides: a comparative study
Shalini Tomar, Barun Ghosh, Sougata Mardanya +5
Two dimensional magnetic materials, with tunable electronic properties could lead to new spintronic, magnetic and magneto-optic applications. Here, we explore intrinsic magnetic or…