93 citations · 464 across the 28 of their papers we have counts for
8 papers · 1 filter
Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series
Keshari Nandan, Somnath Bhowmick, Yogesh S. Chauhan +1
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by th…
Multi Spectral Switchable Infra-Red Reflectance Resonances in Highly Subwavelength Partially Oxidized Vanadium Thin Films
Ashok P, Yogesh Singh Chauhan, Amit Verma
Phase transition materials are promising for realization of switchable optics. In this work, we show reflectance resonances in the near-infrared and long-wave infrared wavelengths…
Static negative susceptibility in ferromagnetic material induced by domain wall motion: an aspect of superconductor state
Nilesh Pandey, Yogesh Singh Chauhan
Domain wall motion in magnetic materiel induces the negative susceptibility leading to a perfect diamagnetism state. The local susceptibility is calculated by the derivative of mag…
Physics and modeling of multi-domain FeFET with domain wall induced Negative Capacitance
Nilesh Pandey, Yogesh Singh Chauhan
In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhib…
Dynamics of Multi-Domains in Ferroelectric Tunnel Junction
Nilesh Pandey, Yogesh Singh Chauhan
The Discovery of giant tunnel electroresistance (TER) in Ferroelectric Tunnel Junction (FTJ) paves a futuristic possibility of utilizing the FTJ as a bistable resistive device with…
Strain-tunable in-plane ferroelectricity and lateral tunnel junction in monolayer group-IV monochalcogenides
Achintya Priydarshi, Yogesh Singh Chauhan, Somnath Bhowmick +1
2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=…
Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors
Keshari Nandan, Barun Ghosh, Amit Agarwal +2
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first…
PdSe2 based field-effect transistors
Keshari Nandan, Amit Agarwal, Somnath Bhowmick +1
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance…