52 citations · 63 across the 4 of their papers we have counts for
4 papers
Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
Keshari Nandan, Ateeb Naseer, Amit Agarwal +2
Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cell…
Designing power efficient transistors using narrow bandwidth materials from the MA2Z4 monolayer series
Keshari Nandan, Somnath Bhowmick, Yogesh S. Chauhan +1
The subthreshold leakage current in transistors has become a critical limiting factor for realizing ultra-low-power transistors. The leakage current is predominantly dictated by th…
Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors
Keshari Nandan, Barun Ghosh, Amit Agarwal +2
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first…
PdSe2 based field-effect transistors
Keshari Nandan, Amit Agarwal, Somnath Bhowmick +1
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance…