Novel Two-Dimensional Layered MSi${}_2$N${}_4$ (M = Mo, W): New Promising Thermal Management Materials

Abstract

With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical flexibility, and precisely controlled growth, two-dimensional (2D) materials are widely accepted as ideal candidates for thermal management materials. In this work, by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations, we comprehensively investigated the thermal conductivity of novel 2D layered MSi${}_2$N${}_4$ (M = Mo, W). Our results point to competitive thermal conductivities (162 W/mK) of monolayer MoSi${}_2$N${}_4$, which is around two times larger than that of WSi${}_2$N${}_4$ and seven times larger than that of silicene despite their similar non-planar structures. It is revealed that the high thermal conductivity arises mainly from its large group velocity and low anharmonicity. Our result suggests that MoSi${}_2$N${}_4$ could be a potential candidate for 2D thermal management materials.

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