Valley-dependent giant orbital moments and transport feature in rhombohedral graphene multilayers
arXiv:2503.16761 · doi:10.1103/PhysRevB.111.165102
Abstract
Recent years have witnessed a great interest in orbital related electronics (also termed as orbitronics). In the current work, we present a first-principles density functional theory calculation on the orbital magnetic moments, intrinsic orbital Hall effect, and ordinary magnetoconductivity effects in rhombohedral graphene multilayers. Our calculations suggest a giant orbital moment that arises from inter-atomic cycloid motion, reaching over 30 muB under an intermediate gate voltage. This leads to a valley polarization under an external magnetic field, as observed in recent experiments [Nature 623, 41-47 (2023)]. In addition, the orbital-related transport feature exhibit significant responses that are potentially observed in experiments. We also suggest that under a periodic field driven (such as high frequency light field), the ungated graphene multilayers could host strong quantum anomalous and orbital Hall effects, engineered by the layer number. As the graphene multilayers are intrinsically nonmagnetic with negligible spin-orbit coupling, the orbital moments would not be entangled by spin-related signals. Thus, they serve as an ideal platform to conduct orbitronic measurements and utilization for next generation information read/write nanodevices.
6 figures, in press PRB
References in corpus (31)
- The electronic properties of graphene
- Valley filter and valley valve in graphene
- The Magnus expansion and some of its applications
- Spin-orbit gap of graphene: First-principles calculations
- Study of Intrinsic Spin Hall Effect and Orbital Hall Effect in 4d- and 5d- Transition Metals
- Superconductivity in rhombohedral trilayer graphene
- Observation of the orbital Hall effect in a light metal Ti
- Giant Orbital Hall Effect in Transition Metals: Origin of Large Spin and Anomalous Hall Effects
- Valley susceptibility of an interacting two-dimensional electron system
- Photoinduced transition between conventional and topological insulators in two-dimensional electronic systems
- Quantum Theory of Orbital Magnetization and its Generalization to Interacting Systems
- Orbitronics: Orbital Currents in Solids
- Magneto-Optical Detection of the Orbital Hall Effect in Chromium
- Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
- Disentangling orbital and valley Hall effects in bilayers of transition metal dichalcogenides
- Orbital Hall effect as an alternative to valley Hall effect in gapped graphene
- Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene
- Orbital Multiferroicity in Pentalayer Rhombohedral Graphene
- Orbital Rashba effect in surface oxidized Cu film
- Large Quantum Anomalous Hall Effect in Spin-Orbit Proximitized Rhombohedral Graphene
- Intrinsic orbital and spin Hall effects in monolayer transition metal dichalcogenides
- Theory of quantum anomalous Hall phases in pentalayer rhombohedral graphene moiré structures
- Pure Bulk Orbital and Spin Photocurrent in Two-Dimensional Ferroelectric Materials
- Orbital Origin of Intrinsic Planar Hall Effect
- Dominance of extrinsic scattering mechanisms in the orbital Hall effect: graphene, transition metal dichalcogenides and topological antiferromagnets
- Two-carrier analyses of the transport properties of black phosphorus under pressure
- Observing light-induced Floquet band gaps in the longitudinal conductivity of graphene
- Layer-dependent evolution of electronic structures and correlations in rhombohedral multilayer graphene
- Orbital Rashba effect as a platform for robust orbital photocurrents
- Extremely large magnetoresistance in the "ordinary" metal ReO3
- Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime