Magnetic precession induced spin accumulation in collinear antiferromagnets
arXiv:2605.30016 · doi:10.1103/ftsx-tzcb
Abstract
Generating and characterizing uniform and staggered spin polarization in antiferromagnets is one of the key challenges for antiferromagnetic spintronic technology. Here, we perform perturbative theory, group-theoretical symmetry analysis, low energy and ab initio simulations to propose that the magnetic precession near the equilibrium magnetic axis could generate finite uniform and staggered spin polarization at the opposite magnetic sublattices (referring to total magnetic and Néel vector generation) in a single AFM semiconductors. This response does not require the heterojunction setup and could eliminate the lattice mismatch issues at the junction. Through scrutinizing all symmetrically-protected vanishing magnetic moment groups and especially focusing on parity-time (PT ) invariant groups, we identify the symmetry constraints that describe the staggered spin accumulation responses, and disclose their fieldlike and dampinglike characters. This unravels a hidden spin accumulation mode in AFM semiconductors. Furthermore, we simulate such an effect using a perturbative approach and suggest that electric gate field and Floquet light-dressing can effectively manipulate these responses.
arXiv comment4 figures, PRB in press
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