Orbital Origin of Intrinsic Planar Hall Effect

Abstract

Recent experiments reported an antisymmetric planar Hall effect, where the Hall current is odd in the in-plane magnetic field and scales linearly with both electric and magnetic fields applied. Existing theories rely exclusively on a spin origin, which requires spin-orbit coupling to take effect. Here, we develop a general theory for the intrinsic planar Hall effect (IPHE), highlighting a previously unknown orbital mechanism and connecting it to a band geometric quantity -- the anomalous orbital polarizability (AOP). Importantly, the orbital mechanism does not request spin-orbit coupling, so sizable IPHE can occur and is dominated by orbital contribution in systems with weak spin-orbit coupling. Combined with first-principles calculations, we demonstrate our theory with quantitative evaluation for bulk materials $\mathrm{TaS}{\mathrm{b}}_2$, $\mathrm{NbA}{\mathrm{s}}_2$, and $\mathrm{SrA}{\mathrm{s}}_3$. We further show that AOP and its associated orbital IPHE can be greatly enhanced at topological band crossings, offering a new way to probe topological materials.

References in corpus (10)

• Semiclassical theories of the anomalous Hall effect
• Topological Nodal Line Semimetals in CaP3 family of materials
• Multivariable Scaling for the Anomalous Hall Effect
• Nonlinear planar Hall effect
• Intrinsic Nonlinear Planar Hall Effect
• Adiabatically Induced Orbital Magnetization
• Time-Reversal-Even Nonlinear Current Induced Spin Polarization
• Quantum-oscillation-modulated angular dependences of the positive longitudinal magnetoconductivity and planar Hall effect in Weyl semimetals
• Determination of spin-orbit interaction in semiconductor nanostructures via non-linear transport
• Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs${}_2$ and W${}_2$As${}_3$ with extremely large magnetoresistance

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